Metal-Insulator-Semiconductor Photodetectors

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Metal-Insulator-Semiconductor Photodetectors

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

متن کامل

Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bia...

متن کامل

Plasmonic Nanoslit Enhanced Metal-Semiconductor-Metal Photodetectors

We computationally show that metallic nanoslitsintegrated on Germanium metalsemiconductor-metal photodetectors show absorption enhancement up to 8 for TM-polarization in the communications C-band due to interference of horizontal surface plasmons. OCIS codes: 040.5160; 130.0250; 250.5403 Semiconductor industry has continuously scaled down electronic devices, significantly improving device leve...

متن کامل

High-speed solar-blind AlGaN-based metal–semiconductor–metal photodetectors

Solar-blind AlGaN metal–semiconductor–metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10 A/cm at 40 V reverse bias. Photoconductive gain-assisted photoresponse w...

متن کامل

Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Sensors

سال: 2010

ISSN: 1424-8220

DOI: 10.3390/s101008797